| PART |
Description |
Maker |
| SKB06N60HS |
High Speed IGBT in NPT-technology
|
INFINEON[Infineon Technologies AG]
|
| APT20GN60B APT20GN60BG APT20GN60S APT20GN60SG |
Thunderbolt High Speed NPT IGBT
|
Microsemi Corporation
|
| FGH40N120AN |
High speed switching
1200V NPT IGBT
|
Fairchild Semiconductor
|
| SKW20N60HS SKW20N60HS08 |
High Speed IGBT in NPT-technology 30% lower Eoff compared to previous generation
|
Infineon Technologies AG
|
| SKW30N60HS SKW30N60HS08 |
High Speed IGBT in NPT-technology 30% lower Eoff compared to previous generation
|
Infineon Technologies AG
|
| SGD04N60 |
Fast S-IGBT in NPT-technology( NPT 技术中的快S-IGBT) 9.4 A, 600 V, N-CHANNEL IGBT, TO-252AA
|
Infineon Technologies AG
|
| IXDP20N60BD1 IXDP20N60B |
IGBT Discretes: NPT IGBT
High Voltage IGBT with optional Diode
|
IXYS[IXYS Corporation]
|
| BUP200D Q67040-A4420-A2 BUP200-D |
IGBT With Antiparallel Diode (Low forward voltage drop High switching speed Low tail current Latch-up free) 3.6 A, 1200 V, N-CHANNEL IGBT, TO-220AB
High Speed CMOS Logic 7-Stage Binary Ripple Counter 14-SOIC -55 to 125 由于IGBT的反平行二极管（低正向压降高开关速度低尾电流闭锁免费
From old datasheet system
IGBT Duopack (IGBT with Antiparallel ...
|
SIEMENS AG
SIEMENS[Siemens Semiconductor Group]
Infineon
|
| APT150GT120JR |
Thunderbolt IGBT
Insulated Gate Bipolar Transistor - NPT Standard Speed; Package: ISOTOP®; BV(CES) (V): 1200; VCE(sat) (V): 3.2; IC (A): 90; 170 A, 1200 V, N-CHANNEL IGBT
|
Microsemi Corporation
Microsemi, Corp.
|
| IXGP10N60A |
Low VCE(sat) IGBT, High speed IGBT 20 A, 600 V, N-CHANNEL IGBT, TO-220AB
|
IXYS, Corp.
|
